Power Rectifier. CS10S280CT-A Datasheet

CS10S280CT-A Rectifier. Datasheet pdf. Equivalent


Part CS10S280CT-A
Description Super Low Barrier High Voltage Power Rectifier
Feature Chip Integration Technology Corporation CS10S280CT-A Super Low Barrier High Voltage Power Rectifier.
Manufacture CITC
Datasheet
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CS10S280CT-A
Chip Integration Technology Corporation
CS10S280CT-A
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
2x5A
280V
175OC
0.64V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Outline
TO-220AB
ØP
A
F
B
C
Marking code
G
123
C
EH
I
D
K
L
M
JN
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.398(10.1) 0.406(10.3)
0.236(6.0) 0.252(6.4)
0.579(14.7) 0.594(15.1)
0.543(13.8) 0.551(14.0)
0.143(3.63) 0.159(4.03)
0.104(2.64) 0.112(2.84)
0.335(8.5) 0.350(8.9)
0.046(1.17) 0.054(1.37)
0.028(0.71) 0.036(0.91)
0.098(2.49) 0.102(2.59)
0.176(4.47) 0.184(4.67)
0.046(1.17) 0.054(1.37)
0.102(2.6) 0.110(2.8)
0.019(0.28) 0.021(0.48)
0.147(3.74) 0.155(3.94)
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
ØP A
F
B
C
Marking code
G
123
EH
I
D
K
L
M
JN
Alternate
symbol Dimensions in inches(millimeters)
Min Max
A 0.394(10.0) 0.413(10.5)
B 0.228(5.8) 0.268(6.8)
C 0.570(14.48) 0.625(15.87)
D 0.519(13.18) 0.558(14.18)
E 0.089(3.5) 0.099(3.9)
F 0.100(2.54) 0.120(3.04)
G 0.330(8.38) 0.350(8.9)
H 0.045(1.15) 0.060(1.52)
I 0.029(0.75) 0.037(0.95)
J 0.095(2.42) 0.105(2.66)
K 0.160(4.07) 0.190(4.82)
L 0.045(1.15) 0.055(1.39)
M 0.080(2.04) 0.110(2.8)
N 0.013(0.33) 0.019(0.52)
ØP 0.148(3.75) 0.156(3.95)
Maximum ratings and electrical characteristics
PIN 1
PIN 3
PIN 2
Dimensions in inches and (millimeters)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Thermal resistance(1) (per diode)
Operating and Storage temperature
Conditions
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
2us - 1kHz
Junction to case
Symbol
VRRM
VRWM
VRM
IO
IFSM
IRRM
RθJC
TJ, TSTG
CS10S280CT-A
CS10S280CT
280
10
280
3
2
-55 ~ +175
UNIT
V
A
A
A
OC/W
OC
Parameter
Conditions
Forward voltage drop (per diode)
Reverse current (per diode)
IF = 5A, TJ = 25OC
IF = 5A, TJ = 125OC
IF = 10A, TJ = 25OC
VR = VRRM, TJ = 25OC
VR = VRRM, TJ = 125OC
Reverse recovery time (per diode)
IF = 0.5A, IR = 1A, IRR = 0.25A
IF = 1A, VR = 30V, di/dt = 100A/us, TJ = 25OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol
VF
IR
trr
MIN.
1
TYP.
640
25
28
MAX.
860
710
920
0.2
25
30
35
UNIT
mV
mA
ns
Document ID : DS-11KFN
Revised Date : 2015/08/06
Revision : C4



CS10S280CT-A
Chip Integration Technology Corporation
CS10S280CT-A
Super Low Barrier High Voltage Power Rectifier
Rating and characteristic curves
Fig. 1 - Instantaneous Forward
Characteristics
100
10
TA=150°C
TA=125°C
1
TA=100°C
TA=75°C
0.1
TA=50°C
TA=25°C
0.01
0
0.2 0.4 0.6 0.8
1.0 1.2
Instantaneous Forward Voltage,VF (Volts)
Fig.2 - Forward Current Derating Curve (per diode)
6
4
2
50 75 100 125 150 175
Ambient Temperature,TA ( OC)
Fig. 3 - Reverse Characteristics
100
10
1
0.1
0.01
TA=150OC
TA=125OC
T A=1 0 0O C
TA=75OC
TA=50OC
TA=25OC
0.001
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage ( %)
Document ID : DS-11KFN
2 Revised Date : 2015/08/06
Revision : C4







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