Power Rectifier. CS20S200CT-A Datasheet

CS20S200CT-A Rectifier. Datasheet pdf. Equivalent


Part CS20S200CT-A
Description Super Low Barrier High Voltage Power Rectifier
Feature Chip Integration Technology Corporation CS20S200CT-A Super Low Barrier High Voltage Power Rectifier.
Manufacture CITC
Datasheet
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CS20S200CT-A
Chip Integration Technology Corporation
CS20S200CT-A
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
2x10A
200V
175OC
0.65V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Maximum ratings and electrical characteristics
Outline
TO-220AB
ØP
A
F
B
C
Marking code
G
123
C
EH
I
D
K
L
M
JN
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.398(10.1) 0.406(10.3)
0.236(6.0) 0.252(6.4)
0.579(14.7) 0.594(15.1)
0.543(13.8) 0.551(14.0)
0.143(3.63) 0.159(4.03)
0.104(2.64) 0.112(2.84)
0.335(8.5) 0.350(8.9)
0.046(1.17) 0.054(1.37)
0.028(0.71) 0.036(0.91)
0.098(2.49) 0.102(2.59)
0.176(4.47) 0.184(4.67)
0.046(1.17) 0.054(1.37)
0.102(2.6) 0.110(2.8)
0.019(0.28) 0.021(0.48)
0.147(3.74) 0.155(3.94)
ØP A
F
B
C
Marking code
G
123
EH
I
D
K
L
M
JN
Alternate
symbol Dimensions in inches(millimeters)
Min Max
A 0.394(10.0) 0.413(10.5)
B 0.228(5.8) 0.268(6.8)
C 0.570(14.48) 0.625(15.87)
D 0.519(13.18) 0.558(14.18)
E 0.089(3.5) 0.099(3.9)
F 0.100(2.54) 0.120(3.04)
G 0.330(8.38) 0.350(8.9)
H 0.045(1.15) 0.060(1.52)
I 0.029(0.75) 0.037(0.95)
J 0.095(2.42) 0.105(2.66)
K 0.160(4.07) 0.190(4.82)
L 0.045(1.15) 0.055(1.39)
M 0.080(2.04) 0.110(2.8)
N 0.013(0.33) 0.019(0.52)
ØP 0.148(3.75) 0.156(3.95)
PIN 1
PIN 3
PIN 2
Dimensions in inches and (millimeters)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Thermal resistance(1) (per diode)
Operating and Storage temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VRRM
VRWM
VRM
IO
IFSM
2us - 1kHz
IRRM
Junction to case
RθJC
TJ, TSTG
CS20S200CT-A
CS20S200CT
200
20
250
1
2
-55 ~ +175
UNIT
V
A
A
A
OC/W
OC
Parameter
Conditions
Forward voltage drop (per diode)
IF = 10A, TJ = 25OC
IF = 10A, TJ = 125OC
Reverse current (per diode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol MIN.
VF
IR
TYP.
650
MAX.
830
690
0.1
30
UNIT
mV
mA
Document ID : DS-11KGH
1 Revised Date : 2015/08/06
Revision : C2



CS20S200CT-A
Chip Integration Technology Corporation
Rating and characteristic curves
CS20S200CT-A
Super Low Barrier High Voltage Power Rectifier
Fig.1 - Forward Current Derating Curve (per diode)
10
8
6
4
2 single phase half wave 60Hz
resistive or inductive load
0 25 50 75 100 125 150 175
Case Temperature,TC ( OC)
Fig. 2 - Instantaneous Forward
Characteristics (per diode)
100
TJ=150°C
TJ=125°C
10
TJ=75°C
TJ=25°C
1
0.3 0.4
0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage,VF (Volts)
Fig. 3 - Reverse Characteristics (per diode)
10
TJ=150OC
1
TJ=125OC
0.1
0.01
TJ=75OC
0.001
0
20 40
60 80 100 120 140
Reverse Voltage,VR (V)
TJ=25OC
160 180 200
Document ID : DS-11KGH
2 Revised Date : 2015/08/06
Revision : C2







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