Power Rectifier. CSD20L45CT-A Datasheet

CSD20L45CT-A Rectifier. Datasheet pdf. Equivalent


Part CSD20L45CT-A
Description Super Low Barrier High Voltage Power Rectifier
Feature Chip Integration Technology Corporation CSD20L45CT-A Super Low Barrier High Voltage Power Rectifier.
Manufacture CITC
Datasheet
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CSD20L45CT-A
Chip Integration Technology Corporation
CSD20L45CT-A
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
2x10A
45V
150OC
0.42V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Suffix "G" indicates Halogen-free part, ex.CSD20L45CTG-A.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : Molded plastic, DPAK / TO-252.
Lead : Solder plated, solderable per MIL-STD-750,
Method 2026.
Polarity: Indicated by cathode band.
Mounting Position : Any.
Weight : Approximated 0.34 gram.
Maximum ratings and electrical characteristics
Outline
DPAK(TO-252)
0.059(1.50)
0.047(1.20)
0.262(6.65)
0.250(6.35)
0.212(5.40)
0.205(5.20)
2
Marking code
0.094(2.40)
0.087(2.20)
0.022(0.56)
0.018(0.46)
1
0.027(0.70)
0.020(0.50)
3 0.022(0.56)
0.018(0.46)
0.185(4.70)
0.177(4.50)
PIN 1
PIN 3
0.057(1.45)
0.037(0.95)
PIN 2
Dimensions in inches and (millimeters)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current
Forward surge current
Thermal resistance(1)
Operating and Storage temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Junction to case
VRRM
VRWM
VRM
IO
IFSM
RθJC
TJ, TSTG
CSD20L45CT-A
CSD20L45CT
45
20
250
4
-55 ~ +150
UNIT
V
A
A
OC/W
OC
Parameter
Conditions
Forward voltage drop
Reverse current
IF = 10A, TJ = 25OC
IF = 10A, TJ = 125OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol MIN.
VF
IR
TYP.
420
MAX.
500
470
0.5
100
UNIT
mV
mA
Document ID : DS-12KCF
1 Revised Date : 2015/08/11
Revision : C3



CSD20L45CT-A
Chip Integration Technology Corporation
Rating and characteristic curves
CSD20L45CT-A
Super Low Barrier High Voltage Power Rectifier
Fig.1 - Forward Current Derating Curve
12
10
8
6
4
2
0
0 25 50 75 100 125 150
Case Temperature,TC ( OC)
Fig. 2 - Instantaneous Forward
Characteristics (per diode)
100
10
TA=150°C
TA=125°C
1
TA=100°C
TA=75°C
0.1 TA=25°C
0.01
0
0.1 0.2
0.3 0.4 0.5 0.6
Instantaneous Forward Voltage,VF (Volts)
Fig. 3 - Reverse Characteristics (per diode)
100
TA=150OC
10 TA=125OC
TA=100OC
1
TA=75OC
0.1
0.01
0
TA=25OC
10 20
30 40
Reverse Voltage,VR (V)
50
Document ID : DS-12KCF
2 Revised Date : 2015/08/11
Revision : C3





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