BC212 BC212A BC212B
SILICON PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR...
BC212 BC212A BC212B
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BC212 series are silicon
PNP transistors designed for low noise, high gain amplifier applications.
TO-92 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA
60 50 5.0 200 300 -65 to +150 416
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=30V
IEBO
VEB=4.0V
BVCBO
IC=10μA
60
BVCEO
IC=2.0mA
50
BVEBO
IE=10μA
5.0
VCE(SAT) IC=10mA, IB=500μA
VCE(SAT) IC=100mA, IB=5.0mA
VBE(SAT) IC=100mA, IB=5.0mA
VBE(ON)
VCE=5.0V, IC=2.0mA
0.60
hFE VCE=5.0V, IC=2.0mA (BC212) 60
hFE
VCE=5.0V, IC=2.0mA (BC212A)
100
hFE
VCE=5.0V, IC=2.0mA (BC212B)
200
fT
VCE=5.0V, IC=10mA, f=100MHz
...
