BD682

BD676A/678A/680A/682 BD676A/678A/680A/682 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectively PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD676A : BD678A : BD680A : BD682 1 TO-126 2.Collector 3.Base 1. Emitter Value - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 -5 -4 -6 - 100 14 88 150 - 65 ~ 150 Units V V V V V V V V V A A mA W °C/W °C °C VCEO Collector-Emitter Voltage : BD676A : BD678A : BD680A : BD682 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Thermal Resistance (Junction to Ambient) Junction Temperature Storage Temperature VEBO IC ICP IB PC Rθja TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD676A : BD678A : BD680A : BD682 Collector-Base Voltage : BD676A : BD678A : BD680A : BD682 Test Condition IC = - 50mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 200 - 200 - 200 - 200 - 500 - 500 - 500 - 500 -2 750 750 - 2.8 - 2.5 - 2.5 - 2.5 V V V V µA µA µA µA µA µA µA µA mA Typ. Max. Units ICBO VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, VBE = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 1.5A IC = - 2A, IB = - 40mA IC = -...