Barrier Rectifiers. MBR1045 Datasheet

MBR1045 Datasheet PDF, Equivalent


Part Number

MBR1045

Description

10A High Power Schottky Barrier Rectifiers

Manufacture

CITC

Total Page 3 Pages
PDF Download
Download MBR1045 Datasheet PDF


MBR1045 Datasheet
MBR1040 THRU MBR10200
10A High Power Schottky Barrier Rectifiers
Features
Outline
• Electrostatic discharge (ESD) test under IEC6100-4-2
standard >16ΚV(ΜΒR1040~ΜΒR1065).
standard >10ΚV(ΜΒR10100~ΜΒR10200).
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Suffix "G" indicates Halogen-free part, ex.MBR1040G.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
TO-220AC
0.410(10.20)
0.386(9.80)
0.230(5.85)MIN
0.146(3.70)
MIN Marking code
1
0.051(1.30)
MAX.
0.033(0.85)
0.030(0.75)
2
0.250(6.35)MAX
0.190(4.82)MAX
0.055(1.40)
0.043(1.10)
0.624(15.87)MAX
0.500(12.70)MIN
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-220AC molded plastic body over
passivated chip.
Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
Polarity: Color band denotes cathode end.
Mounting Position : Any.
Weight : Approximated 2.24 gram.
PIN 1
PIN 2
0.213(5.40)
0.189(4.80)
CASE
0.370(0.68)
0.015(0.38)
PIN 1
PIN 2
CASE
Case Negative Suffix "R"
Dimensions in inches and (millimeters)
Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Forward rectified current
Forward surge current
Reverse current
Diode junction capacitance
Thermal resistance
Storage temperature
Conditions
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VR = VRRM TA = 25OC
VR = VRRM TA = 125OC
f=1MHz and applied 4V DC reverse voltage
Junction to ambient
Symbol
IO
IFSM
IR
CJ
RθJA
TSTG
MIN.
-55
TYP.
150
30
MAX.
10
150
0.1
10
+175
UNIT
A
A
mA
pF
OC/W
OC
Symbol
MBR1040
MBR1045
MBR1060
MBR1065
MBR10100
MBR10150
MBR10200
Marking code
Max.
repetitive peak
reverse voltage
VRRM (V)
MBR1040
40
MBR1045
45
MBR1060
60
MBR1065
65
MBR10100
100
MBR10150
150
MBR10200
200
Max.
RMS voltage
VRMS (V)
28
31.5
42
45.5
70
105
140
Max. DC
blocking voltage
VR (V)
40
45
Max.
forward voltage
@10A, TA = 25OC
VF (V)
0.70
Max.
forward voltage
@10A, TA = 125OC
VF (V)
Operating
temperature
TJ (OC)
0.57
60 -50 ~ +150
0.79
0.70
65
100 0.81 0.71
150 0.87 0.77
-50 ~ +175
200 0.90 0.80
Document ID : DS-11K0F
1 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C

MBR1045 Datasheet
MBR1040 THRU MBR10200
10A High Power Schottky Barrier Rectifiers
Rating and characteristic curves
Fig.1 - Forward Current Derating Curve
12
RESISTIVE OR INDUCTIVE LOAD
10
MBR1040~MBR10100
8
MBR10150~MBR10200
6
4
2 single phase half wave 60Hz
resistive or inductive load
0 25 50 75 100 125 150 175
Lead Temperature ( OC)
Fig. 3.1 - Typical Instantaneous Forward
Characteristics
50
TJ=125OC
10 MBR1040
1
TJ=25OC
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (Volts)
1.2
Fig. 3.3 - Typical Instantaneous Forward
Characteristics
100
MBR10150
MBR10200
10 TJ=125OC
TJ=25OC
1
0 0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (Volts)
1.2
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
150
125
100
75
50
25
0
1
10
Number of Cycles at 60 Hz
100
Fig. 3.2 - Typical Instantaneous Forward
Characteristics
50
MBR1060
MBR10100
10 TJ=125OC
TJ=25OC
1.0
0.5
0
0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (Volts)
Fig. 4 - Typical Reverse Characteristics
100
10
TJ=150OC
1
TJ=125OC
0.1
0.01
TJ=75OC
0.001
TJ=25OC
0.0001
0 10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage ( %)
Document ID : DS-11K0F
2 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C


Features Datasheet pdf MBR1040 THRU MBR10200 10A High Power Sch ottky Barrier Rectifiers ■ Features ■ Outline • Electrostatic dischar ge (ESD) test under IEC6100-4-2 standar d >16ΚV(ΜΒR1040~ΜΒR1065). standard >10ΚV(ΜΒR10100~ΜΒR10200). • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • G uardring for overvoltage protection. Ultra high-speed switching. • Silic on epitaxial planar chip, metal silicon junction. • Suffix "G" indicates Hal ogen-free part, ex.MBR1040G. • Lead-f ree parts meet environmental standards of MIL-STD-19500 /228 ■ Mechanical da ta TO-220AC 0.410(10.20) 0.386(9.80) 0.230(5.85)MIN 0.146(3.70) MIN Marking code 1 0.051(1.30) MAX. 0.033(0.85) 0 .030(0.75) 2 0.250(6.35)MAX 0.190(4.8 2)MAX 0.055(1.40) 0.043(1.10) 0.624(15. 87)MAX 0.500(12.70)MIN • Epoxy : UL9 4-V0 rated flame retardant. • Case : JEDEC TO-220AC molded plastic body over passivated chip. • Lead : Axial leads, solderable per MIL-ST.
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