BD810

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features High DC Current Gain These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO VCBO VEBO IC IB PD 80 80 5.0 10 6.0 90 0.72 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Symbol RqJC Max 1.39 Unit °C/W www.onsemi.com 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS PNP COLLECTOR 2, 4 NPN COLLECTOR 2, 4 1 BASE EMITTER 3 4 1 BASE EMITTER 3 TO−220 CASE 221A STYLE 1 12 3 MARKING DIAGRAM BD8xxG AY WW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 8 1 BD8xx = A= Y= WW = G= Device Code x = 09 or 10 Assembly Location Year Work Week Pb−F...