BD809 (NPN), BD810 (PNP)
Plastic High Power Silicon Transistors
These devices are designed for use in high power audio ...
BD809 (
NPN), BD810 (
PNP)
Plastic High Power Silicon
Transistors
These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
Features
High DC Current Gain These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation
@ TC = 25°C Derate above 25°C
VCEO VCBO VEBO
IC IB PD
80 80 5.0 10 6.0
90 0.72
Vdc Vdc Vdc Adc Adc
W W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction−to−Case
Symbol RqJC
Max 1.39
Unit °C/W
www.onsemi.com
10 AMPERE POWER
TRANSISTORS
80 VOLTS 90 WATTS
PNP COLLECTOR 2, 4
NPN COLLECTOR 2, 4
1 BASE
EMITTER 3
4
1 BASE
EMITTER 3
TO−220 CASE 221A
STYLE 1
12 3
MARKING DIAGRAM
BD8xxG AY WW
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 8
1
BD8xx =
A= Y= WW = G=
Device Code x = 09 or 10 Assembly Location Year Work Week Pb−F...