BD825

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD825; BD829 NPN power transistors Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN power transistors FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS General purpose Driver stages in hi-fi amplifiers and television circuits. DESCRIPTION NPN power transistor in a TO-202; SOT128B plastic package. PNP complements: BD826 and BD830. handbook, halfpage BD825; BD829 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION 2 3 1 1 2 3 MAM305 Fig.1 Simplified outline (TO-202; SOT128B) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BD825 BD829 VCEO collector-emitter voltage BD825 BD829 ICM Ptot hFE fT peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tmb ≤ 50 °C IC = 150 mA; VCE = 2 V IC = 50 mA; VCE = 5 V; f = 100 MHz open base − − − − − 95 − − − − − − − 250 45 80 1.5 2 8 165 − MHz V V A W W CONDITIONS open emitter − − − − 45 100 V V MIN. TYP. MAX. UNIT 1998 May 29 2 Philips Semiconductors Product specification NPN power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BD825 BD829 VCEO collector-emitter voltage BD825 BD829 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak col...