BD830

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD830 PNP power transistor Product specification Supersedes data of 1998 May 29 1999 Apr 21 Philips Semiconductors Product specification PNP power transistor FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS General purpose Driver stages in hi-fi amplifiers and television circuits. DESCRIPTION PNP power transistor in a TO-202; SOT128B plastic package. NPN complement: BD829. 3 1 handbook, halfpage BD830 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION 2 1 2 3 MAM304 Fig.1 Simplified outline (TO-202; SOT128B) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tmb ≤ 50 °C CONDITIONS open emitter open base open collector − − − − − − − − −65 − −65 MIN. MAX. −100 −80 −5 −1 −1.5 −500 2 8 +150 150 +150 UNIT V V V A A mA W W °C °C °C 1999 Apr 21 2 Philips Semiconductors Product specification PNP power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base CONDITIONS in free air VALUE 62.5 12.5...