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1SS400G

Eris

Switching diode

1SS400G Switching diode .056(1.45) .052(1.35) .040(1.05) .037(0.95) .013(0.32) .009(0.24) .025(0.65) .021(0.55) .006...


Eris

1SS400G

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Description
1SS400G Switching diode .056(1.45) .052(1.35) .040(1.05) .037(0.95) .013(0.32) .009(0.24) .025(0.65) .021(0.55) .006(0.16) .003(0.08) .021(0.55) .017(0.45) SOD-723 Dimensions in inches and (millimeters) FEATURES ‧Extremely small surface mounting type. ‧High Speed. ‧High reliability. ‧Silicon epitaxial planar ‧High speed switching ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Junction temperature Storage temperature ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Forward voltage VF Reverse current IR Capacitance between terminals Reverse recovery time CT trr Typ. - 0.72 - Device Marking 1SS400G =3 Symbol VRM VR IFM IO Isurge Tj Tstg Limits 90 80 225 100 500 125 -55 ~ 125 Unit V V mA mA mA oC oC Max. 1.2 0.1 3 4 Unit Conditions V IF=100mA uA VR=80V pF VR=0.5V , f=1MHz n SR=6V , IF=10mA , RL=100Ω Revision: B01 www.eris.com.tw FORWARD CURRE...




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