BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 ...
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
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Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1.5 V, 3 A
B C E
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TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BDT60 Collector-base voltage (IE = 0) BDT60A BDT60B BDT60C BDT60 Collector-emitter voltage (IB = 0) BDT60A BDT60B BDT60C Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot Tj Tstg TA VCEO VCBO SYMBOL VALUE -60 -80 -100 -120 -60 -80 -100 -120 -5 -4 -0.1 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT
PRODUCT
INFORMATION
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