Document
BDW23/A/B/C
BDW23/A/B/C
Hammer Drivers, Audio Amplifiers Applications
• Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BDW23 : BDW23A : BDW23B : BDW23C VCEO Collector-Emitter Voltage : BDW23 : BDW23A : BDW23B : BDW23C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 5 6 8 0.2 50 150 - 65 ~ 150 V V V V V V V V V A A A W °C °C Value Units
VEBO IC ICP IB PC TJ TSTG
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW23/A/B/C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BDW23 : BDW23A : BDW23B : BDW23C Collector Cut-off Current : BDW23 : BDW23A : BDW23B : BDW23C ICEO Collector Cut-off Current : BDW23 : BDW23A : BDW23B : BDW23C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 1A VCE = 3V, IC = 2A VCE = 3V, IC = 6A IC = 2A, IB = 8mA IC = 6A, IB = 60mA IC = 2A, IB = 8mA VCE = 3V, IC = 1A VCE = 3V, IC = 6A IF = 2A 1000 750 100 500 500 500 500 2 20000 2 3 2.5 2.5 3 1.8 V V V V V V µA µA µA µA mA VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 200 200 200 200 µA µA µA µA Test Condition IC = 100mA, IB = 0 Min. 45 60 80 100 Typ. Max. Unit s V V V V
ICBO
VCE(sat) VBE(sat) VBE(on) VF
* Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Base-Emitter ON Voltage * Parallel Diode Forward Voltage
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW23/A/B/C
Typical Characteristics
10000
8.0
VCE = 3V
7.5 7.0
VCE = 3V
IC[A], COLLECTOR CURRENT
6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
hFE, DC CURRENT GAIN
1000
100 0.1
1
10
0.0 0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
100
VCE(sat)[V], SATURATION VOLTAGE
2.4
IC = 250 IB
2.0
IC[A], COLLECTOR CURRENT
10
IC(max). Pulsed IC(max). Continuous
1.6
10µ s
1.2
100µ s
DC
0.8
1
0.4
BDW23 BDW23A BDW23B BDW23C
0.1 1 10
1ms 10ms
0.0 0.1
1
10
100
1000
IC[A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Safe Operating Area
80
70
PC[W], POWER DISSIPATION
60
50
40
30
20
10
0 0 25 50
o
75
100
125
150
175
200
T C[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW23/A/B/C
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.