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BDW23 Dataheets PDF



Part Number BDW23
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Hammer Drivers/ Audio Amplifiers
Datasheet BDW23 DatasheetBDW23 Datasheet (PDF)

BDW23/A/B/C BDW23/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDW23 : BDW23A : BDW23B : BDW23C VCEO Collector-Emitter Voltage : BDW23 : BDW23A : BDW23B : BDW23C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse.

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BDW23/A/B/C BDW23/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDW23 : BDW23A : BDW23B : BDW23C VCEO Collector-Emitter Voltage : BDW23 : BDW23A : BDW23B : BDW23C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 5 6 8 0.2 50 150 - 65 ~ 150 V V V V V V V V V A A A W °C °C Value Units VEBO IC ICP IB PC TJ TSTG ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDW23/A/B/C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BDW23 : BDW23A : BDW23B : BDW23C Collector Cut-off Current : BDW23 : BDW23A : BDW23B : BDW23C ICEO Collector Cut-off Current : BDW23 : BDW23A : BDW23B : BDW23C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 1A VCE = 3V, IC = 2A VCE = 3V, IC = 6A IC = 2A, IB = 8mA IC = 6A, IB = 60mA IC = 2A, IB = 8mA VCE = 3V, IC = 1A VCE = 3V, IC = 6A IF = 2A 1000 750 100 500 500 500 500 2 20000 2 3 2.5 2.5 3 1.8 V V V V V V µA µA µA µA mA VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 200 200 200 200 µA µA µA µA Test Condition IC = 100mA, IB = 0 Min. 45 60 80 100 Typ. Max. Unit s V V V V ICBO VCE(sat) VBE(sat) VBE(on) VF * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Base-Emitter ON Voltage * Parallel Diode Forward Voltage * Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDW23/A/B/C Typical Characteristics 10000 8.0 VCE = 3V 7.5 7.0 VCE = 3V IC[A], COLLECTOR CURRENT 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 hFE, DC CURRENT GAIN 1000 100 0.1 1 10 0.0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 100 VCE(sat)[V], SATURATION VOLTAGE 2.4 IC = 250 IB 2.0 IC[A], COLLECTOR CURRENT 10 IC(max). Pulsed IC(max). Continuous 1.6 10µ s 1.2 100µ s DC 0.8 1 0.4 BDW23 BDW23A BDW23B BDW23C 0.1 1 10 1ms 10ms 0.0 0.1 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area 80 70 PC[W], POWER DISSIPATION 60 50 40 30 20 10 0 0 25 50 o 75 100 125 150 175 200 T C[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDW23/A/B/C Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.


BDW23 BDW23 BDW23A


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