BDW23B

BDW23/A/B/C BDW23/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW24, BDW24A, BDW24B and BDW24C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDW23 : BDW23A : BDW23B : BDW23C VCEO Collector-Emitter Voltage : BDW23 : BDW23A : BDW23B : BDW23C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 5 6 8 0.2 50 150 - 65 ~ 150 V V V V V V V V V A A A W °C °C Value Units VEBO IC ICP IB PC TJ TSTG ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDW23/A/B/C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BDW23 : BDW23A : BDW23B : BDW23C Collector Cut-off Current : BDW23 : BDW23A : BDW23B : BDW23C ICEO Collector Cut-off Current : BDW23 : BDW23A : BDW23B : BDW23C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 1A VCE = 3V, IC = 2A VCE = 3V, IC = 6A IC = 2A, IB = 8mA IC = 6A, IB = 60mA IC = 2A, IB = 8mA VCE = 3V, IC = 1A VCE = 3V, IC = 6A IF = 2A 1000 750 100 500 500 500 500 2 20000 2 3 2.5 2.5 3 1.8 V V V V V V µA µA µA µA mA VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V,...