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BDW23C Dataheets PDF



Part Number BDW23C
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description NPN Transistor
Datasheet BDW23C DatasheetBDW23C Datasheet (PDF)

BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDW24, BDW24A, BDW24B and BDW24C 50 W at 25°C Case Temperature 6 A Continuous Collector Current Minimum hFE of 750 at 3 V, 2 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATIN.

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BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDW24, BDW24A, BDW24B and BDW24C 50 W at 25°C Case Temperature 6 A Continuous Collector Current Minimum hFE of 750 at 3 V, 2 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW23 Collector-base voltage (IE = 0) BDW23A BDW23B BDW23C BDW23 Collector-emitter voltage (IB = 0) BDW23A BDW23B BDW23C Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 6 0.2 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BDW23 V (BR)CEO IC = 100 mA IB = 0 (see Note 3) BDW23A BDW23B BDW23C VCE = 30 V ICEO Collector-emitter cut-off current V CE = 30 V V CE = 40 V V CE = 50 V VCB = 45 V ICBO Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage V CB = 60 V V CB = 80 V V CB = 100 V IEBO VEB = VCE = V CE = V CE = IB = 5V 3V 3V 3V 8 mA IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = IC = IC = IC = IC = IC = IC = IC = IB = 0 1A 2A 6A 2A 6A 2A 1A 6A (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) 1000 750 100 2 3 2.5 2.5 3 1.8 V V V 20000 BDW23 BDW23A BDW23B BDW23C BDW23 BDW23A BDW23B BDW23C MIN 45 60 80 100 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 2 mA mA mA V TYP MAX UNIT hFE VCE(sat) V BE(sat) VBE(on) VEC IB = 60 mA IB = VCE = V CE = IE = 8 mA 3V 3V 2A NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.5 62.5 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = 3 A V BE(off) = -4.5 V IB(on) = 12 mA RL = 10 Ω † MIN IB(off) = -12 mA tp = 20 µs, dc ≤ 2% TYP 1 5 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 40000 TCS120AD COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 1·5 TCS120AE hFE - Typical DC Current Gain TC = -40°C TC = 25°C TC = 100°C 10000 1·0 1000 0·5 TC = -40°C TC = 25°C TC = 100°C 0 0·5 1·0 IC - Collector Current - A 10 VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 IC - Collector Current - A 10 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C TC = 100°C TCS120AF 2·5 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 IC - Collector Current - A 10 Figure 3. PRODUCT INFORMATION 3 BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS120AB DC Operation tp = 300 µs, d = 0.1 = 10% IC - Collector Current - A 10 1·0 BDW23 BDW23A BDW23B BDW23C 0·1 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 60 Ptot - Maximum Power Dissipation - W TIS110AA 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. PRODUCT INFORMATION 4 BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS AUGUST 1993.


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