Voltage Stabilizers. ZTE2 Datasheet

ZTE2 Stabilizers. Datasheet pdf. Equivalent


Vishay ZTE2
VISHAY
Voltage Stabilizers
Features
• Silicon Stabilizer Diodes
• Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits, pro-
viding low dynamic resistance and high-quality
stabilization performance as well as low noise. In
the reverse direction, these devices show the
behavior of forward-biased silicon diodes.
ZTE Series
Vishay Semiconductors
94 9367
• The end of the ZTE device marked with the cath-
ode ring is to be connected: ZTE1.5 and ZTE2 to
the negative pole of the supply voltage; ZTE2.4
thru ZTE5.1 to the positive pole of the supply volt-
age.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13 g
Packaging codes/options:
TR / 10k per 13 " reel (52 mm tape), 30k/box
TAP / 10k per Ammo tape, (52 mm tape), 30k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Operating Current (see Table
"Characteristics")
Inverse Current
IF
Power dissipation
Ptot
Junction temperature
TJ
Storage temperature range
TS
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case
Value
100
3001)
150
- 55 to + 150
Unit
mA
W
°C
°C
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Temperature Coefficient of the IZ = 5 mA
stabilized voltage
Thermal resistance junction to
ambient air
Part
ZTE1.5
Symbol
αVZ
ZTE2
ZTE2.4
ZTE5.1
αVZ
αVZ
αVZ
RθJA
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case
Min
Typ. Value Unit
- 26 10-4/°C
- 26 10-4/°C
- 34 10-4/°C
- 34 10-4/°C
4001)
°C/W
Document Number 85813
Rev. 1.4, 27-Nov-03
www.vishay.com
1


ZTE2 Datasheet
Recommendation ZTE2 Datasheet
Part ZTE2
Description Voltage Stabilizers
Feature ZTE2; VISHAY Voltage Stabilizers Features • Silicon Stabilizer Diodes • Monolithic integrated analog circu.
Manufacture Vishay
Datasheet
Download ZTE2 Datasheet




Vishay ZTE2
ZTE Series
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward Voltage
IF = 10 mA
VISHAY
Symbol
Min
Typ.
Max
Unit
VF 1.1 V
Electrical Characteristics
Partnumber
Operating Voltage(2)
VZ @ IZ = 5 mA
Dynamic Resistance
rzj @ IZ = 5 mA
V
ZTE1.5
1.35 to 1.55
13(<20)
ZTE2
2.0 to 2.3
18(<30)
ZTE2.4
2.2 to 2.56
14(<20)
ZTE2.7
2.5 to 2.9
15(<20)
ZTE3
2.8 to 3.2
15(<20)
ZTE3.3
3.1 to 3.5
16(<20)
ZTE3.6
3.4 to 3.8
16(<25)
ZTE3.9
3.7 to 4.1
17(<25)
ZTE4.3
4.0 to 4.6
17(<25)
ZTE4.7
4.4 to 5.0
18(<25)
ZTE5.1
4.8 to 5.4
18(<25)
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case
(2) Tested with pulses tp = 5 ms
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Permissable operating current(1)
Iz @ Tamb = 25 °C
mA
max
120
120
120
105
95
90
80
75
65
60
55
ZTE
5.1
4.3
3.6
3
18231
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
18232
Figure 2. Dynamic resistance vs. operating current, normalized
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Document Number 85813
Rev. 1.4, 27-Nov-03



Vishay ZTE2
VISHAY
ZTE Series
Vishay Semiconductors
18233
Figure 3. Dynamic resistance vs. operating voltage
ZTE1.5 ZTE2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1
18229
Figure 4. Breakdown Characteristics
Document Number 85813
Rev. 1.4, 27-Nov-03
www.vishay.com
3







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