BDW42

www.DataSheet4U.com BDW42 − NPN, BDW46, BDW47 − PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features http://onsemi.com High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc Monolithic Construction with Built−In Base Emitter Shunt resistors TO−220AB Compact Package Pb−Free Packages Are Available* 15 AMP DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLT, 85 WATT MARKING DIAGRAM 4 MAXIMUM RATINGS Rating Collector-Emitter Voltage BDW46 BDW42, BDW47 Collector-Base Voltage BDW46 BDW42, BDW47 Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEB IC IB PD 85 0.68 TJ, Tstg −55 to +150 W W/°C °C VCB 80 100 5.0 15 0.5 Vdc Adc Adc Symbol VCEO 80 100 Vdc Value Unit Vdc 1 2 3 TO−220AB CASE 221A−09 STYLE 1 BDWxx AYWWG BDWxx = Device Code x = 42, 46, or 47 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device BDW42 BDW42G Package TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220A...