Mode MOSFET. HY1620B Datasheet

HY1620B MOSFET. Datasheet pdf. Equivalent


HOOYI HY1620B
HY1620P/B
N-Channel Enhancement Mode MOSFET
Features
200V/60 A
RDS(ON) = 32 m(typ.) @ VGS=10V
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-263-2L
Applications
Switching application
Power Management for Inverter Systems.
D
G N-Channel MOSFET
Ordering and Marking Information
S
PB
HY1620 HY1620
YYÿ XXXJWW G YYÿ XXXJWW G
Package Code
P:TO-220FB-3L
Date Code
YYXXX WW
B:TO-263-2L
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi.cc
141225


HY1620B Datasheet
Recommendation HY1620B Datasheet
Part HY1620B
Description N-Channel Enhancement Mode MOSFET
Feature HY1620B; HY1620P/B N-Channel Enhancement Mode MOSFET Features • 200V/60 A RDS(ON) = 32 mΩ (typ.) @ VGS=10V .
Manufacture HOOYI
Datasheet
Download HY1620B Datasheet




HOOYI HY1620B
HY1620P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
200
±25
175
-55 to 175
60
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
190**
60
39
214
107
0.7
62.5
EAS Avalanche Energy, Single Pulsed
L=1.5mH
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=100V
163***
Electrical Characteristics
(T
C
=
25°C
Unless
Otherwise
Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VGS=0V, IDS=250µA
VDS=200V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=30A
VSD*
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=30A, VGS=0V
ISD=30A, dlSD/dt=100A/µs
HY1620
Min. Typ. Max.
200 -
-
- -1
- - 10
2.0 3.0 4.0
- - ±100
- 32 40
- 0.8 1
- 40 -
- 83 -
Unit
V
µA
V
nA
m
V
ns
nC
2 www.hooyi.cc



HOOYI HY1620B
HY1620P/B
Electrical Characteristics (Cont.)
(T
C
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD=100V, RG= 6 ,
IDS =30A, VGS=10V,
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=160V, VGS=10V,
IDS=30A
Note * : Pulse test ; pulse width 300µs, duty cycle2%.
.
HY1620
Min. Typ. Max.
- 1.5 -
- 3900 -
- 359 -
- 154 -
- 28
-
- 45
-
- 85 -
- 50 -
- 90 -
- 16 -
- 45 -
Unit
pF
ns
nC
3 www.hooyi.cc







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)