TVS Array. SOT05CD Datasheet

SOT05CD Array. Datasheet pdf. Equivalent


WPM SOT05CD
SOT05CD Standard Capacitance TVS Array
SOT05CD
Standard Capacitance TVS Array
The SOT05CD device is characterized by its high surge capability, low operating and clamping voltages, and fast
response time. This makes it ideal for use as board level protection of sensitive semiconductor components. The
dual-junction common-anode design allows the user to protect one bidirectional data line or two unidirectional lines.
It has been specifically designed to protect sensitive components which are connected to data and transmission lines
from overvoltage caused by ESD(electrostatic discharge), CDE (Cable Discharge Events),and EFT (electrical fast
transients).
Features
Small package for use in portable electronics
Low leakage current
Low clamping voltage
Response Time is < 1 ns
Protects one bidirectional line or two unidirectional lines
Working voltages : 5V
Solid-state silicon avalanche technology
Device Meets MSL 1 Requirements
ROHS compliant
WeiPan technology
Main applications
Data lines
Industrial Controls
Cellular handsets AND accessories
Portable instrumentation
Peripherals
Notebook Computers
Set-Top Box
Projection TV
SOT-23
3
Ordering Information
Device
Qty per Reel
SOT05CD
3000
“xx” =Working Peak Reverse Voltage
Reel Size
7 Inch
E-mail:support@wpmsemi.com Tel:+86 021-67841922 Fax:+86 021-57621210
Revision:A2
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SOT05CD Datasheet
Recommendation SOT05CD Datasheet
Part SOT05CD
Description Standard Capacitance TVS Array
Feature SOT05CD; SOT05CD Standard Capacitance TVS Array SOT05CD Standard Capacitance TVS Array The SOT05CD device is .
Manufacture WPM
Datasheet
Download SOT05CD Datasheet




WPM SOT05CD
SOT05CD Standard Capacitance TVS Array
Maximum ratings (Tamb=25Unless Otherwise Specified)
Parameter
Symbol
Peak Pulse Power (tp=8/20μs waveform)
PPPP
ESD Rating per IEC61000-4-2
Contact
Air
Lead Soldering Temperature
TL
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
Value
300
8
15
260 (10 sec.)
-55 ~ 150
-55 ~ 150
Unit
Watts
KV
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
*Other voltages may be available upon request.
1. Non-repetitive current pulse, per Figure 1.
Electrical characteristics ( Tamb=25Unless Otherwise Specified)
Device
VRWM
IR @ VRWM
VBR @ 1 mA
(Volts)
VC
@1A
Max IPP
(V) (uA)
Min
(V)
(A)
SOT05CD
5
1
6
9.8 17
Junction capacitance is measured in VR=0V,F=1MHz
Capacitance
@ VR = 0 V, 1 MHz (pF)
Typ Max
150 250
Symbol
VRWM
VBR
VC
IT
IRM
IPP
CO
CJ
Parameter
Working Peak Reverse Voltage
Breakdown Voltage @ IT
Clamping Voltage @ IPP
Test Current
Leakage current at VRWM
Peak pulse current
Off-state Capacitance
Junction Capacitance
I
IF
VC VBR VRWM
IR VF
IT
IPP
V
E-mail:support@wpmsemi.com Tel:+86 021-67841922 Fax:+86 021-57621210
Revision:A2
www.wpmsemi.com



WPM SOT05CD
SOT05CD Standard Capacitance TVS Array
Typical electrical characterist applications
110
100
90
80
70
60
50
40
30
20
10
0
0
Waveform
Parameters:
tr=8us
td=20us
td=IPP/2
5 10 15 20 25 30
Time (us)
Pulse Waveform
10
1
0.1
0.01
0.1
1 10 100
Pulse Duration-tpus)
1000
Non-Repetitive Peak Pulse Power vs. Pulse Time
110
100
90
80
70
60
50
40
30
20
10
0
0
25 50 75
100 125
Ambient Temperature-TA
150
Power Derating Curve
2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-25
-20 -15 -10 -5
Voltage-VR(v)
05
Junction Capacitance vs. Reverse Voltage
E-mail:support@wpmsemi.com Tel:+86 021-67841922 Fax:+86 021-57621210
Revision:A2
www.wpmsemi.com







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