PNP Epitaxial Silicon Transistor
FEATURES
Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A
Compleme...
PNP Epitaxial Silicon
Transistor
FEATURES
Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A
Complements the 2SC2562.
Pb
Lead-free
High Speed Switching Time:tstg=1.0µs(Typ.)
Production specification
2SA1012
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60 V
VCEO VEBO IC PC Tj,Tstg
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature
-50 V -5 V -5 A 2W -55 to +150 ℃
X028 Rev.A
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Production specification
PNP Epitaxial Silicon
Transistor
2SA1012
ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base Breakdown Voltage
V(BR)CBO IC=-100μA,IE=0
-60
V
Collector-emitter Breakdown Voltage V(BR)CEO IC=-10mA,IB=0
-50
V
Emitter-base Breakdown Voltage
V(BR)EBO ...
