Silicon Transistor. 2SB507 Datasheet

2SB507 Transistor. Datasheet pdf. Equivalent


GME 2SB507
PNP Epitaxial Silicon Transistor
FEATURES
Low Frequency Power Amplifier.
Complements the 2SD313.
Pb
Lead-free
Production specification
2SB507
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60 V
VCEO
VEBO
IC
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction and Storage Temperature
-60 V
-7 V
-3 A
30 W
-50 to +150
X017
Rev.A
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2SB507 Datasheet
Recommendation 2SB507 Datasheet
Part 2SB507
Description PNP Epitaxial Silicon Transistor
Feature 2SB507; PNP Epitaxial Silicon Transistor FEATURES  Low Frequency Power Amplifier.  Complements the 2SD313.
Manufacture GME
Datasheet
Download 2SB507 Datasheet




GME 2SB507
Production specification
PNP Epitaxial Silicon Transistor
2SB507
ELECTRICAL CHARACTERISTICS Ratings at 25ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector Cut-off Current
ICBO VCB=-60V,IE=0
-100 μA
Emitter Cut-off Current
IEBO VEB=-7V,IC=0
-100 μA
DC Current Gain
hFE
VCE=-2V,IC=-1A
40
320
Collector-emitter Saturation Voltage VCE(sat)
IC=-2A, IB=-0.2A
-1 V
Transition Frequency
fT VCE=-5V, IE=-0.5A
8
MHz
X017
Rev.A
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GME 2SB507
PNP Epitaxial Silicon Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A
N
C
D
K
L
G
M
J
Production specification
2SB507
TO-220AB
TO-220AB
Dim Min Max
A 9.80 10.30
B 8.70 9.10
C 4.47 4.67
D 1.17 1.37
E 2.64 2.84
F 13.14 13.74
G 2.44 2.64
H 28.03 28.83
J 0.28 0.48
K 1.22 1.32
L 0.71 0.91
M 2.40 2.60
N 3.76 3.96
All Dimensions in mm
X017
Rev.A
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