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Silicon Transistor. 2SB507 Datasheet |
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PNP Epitaxial Silicon Transistor
FEATURES
Low Frequency Power Amplifier.
Complements the 2SD313.
Pb
Lead-free
Production specification
2SB507
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60 V
VCEO
VEBO
IC
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction and Storage Temperature
-60 V
-7 V
-3 A
30 W
-50 to +150 ℃
X017
Rev.A
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Production specification
PNP Epitaxial Silicon Transistor
2SB507
ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector Cut-off Current
ICBO VCB=-60V,IE=0
-100 μA
Emitter Cut-off Current
IEBO VEB=-7V,IC=0
-100 μA
DC Current Gain
hFE
VCE=-2V,IC=-1A
40
320
Collector-emitter Saturation Voltage VCE(sat)
IC=-2A, IB=-0.2A
-1 V
Transition Frequency
fT VCE=-5V, IE=-0.5A
8
MHz
X017
Rev.A
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PNP Epitaxial Silicon Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A
N
C
D
K
L
G
M
J
Production specification
2SB507
TO-220AB
TO-220AB
Dim Min Max
A 9.80 10.30
B 8.70 9.10
C 4.47 4.67
D 1.17 1.37
E 2.64 2.84
F 13.14 13.74
G 2.44 2.64
H 28.03 28.83
J 0.28 0.48
K 1.22 1.32
L 0.71 0.91
M 2.40 2.60
N 3.76 3.96
All Dimensions in mm
X017
Rev.A
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