2SB507

PNP Epitaxial Silicon Transistor FEATURES  Low Frequency Power Amplifier.  Complements the 2SD313. Pb Lead-free Production specification 2SB507 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature -60 V -7 V -3 A 30 W -50 to +150 ℃ X017 Rev.A www.gmesemi.com 1 Production specification PNP Epitaxial Silicon Transistor 2SB507 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN TYP MAX UNIT Collector Cut-off Current ICBO VCB=-60V,IE=0 -100 μA Emitter Cut-off Current IEBO VEB=-7V,IC=0 -100 μA DC Current Gain hFE VCE=-2V,IC=-1A 40 320 Collector-emitter Saturation Voltage VCE(sat) IC=-2A, IB=-0.2A -1 V Transition Frequency fT VCE=-5V...