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Silicon Transistor. 2SB861 Datasheet |
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PNP Epitaxial Silicon Transistor
FEATURES
Low Frequency Power Amplifer Coloe
TV Vertical Deflection Output Complementary Pb
Pair With 2SD1138.
Lead-free
Production specification
2SB861
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-200
V
VCEO
VEBO
IC
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Continuous
Peak
Collector Dissipation
Ta=25℃
Tc=25℃
Junction and Storage Temperature
-150
V
-6 V
-2
A
-5
1.8
W
30
-45 to +150 ℃
X032
Rev.A
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1
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Production specification
PNP Epitaxial Silicon Transistor
2SB861
ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions
MIN Typ MAX UNIT
Collector-base Breakdown Voltage
V(BR)CBO IC=-50mA,IE=0
-150
V
Emitter-base Breakdown Voltage
V(BR)EBO IE=-5mA,IC=0
-6
V
Collector Cut-off Current
ICBO
DC Current Gain
hFE
Collector-emitter Saturation Voltage VCE(sat)
VCB=-120V,IE=0
VCE=-4V,IC=-50mA
VCE=-10V,IC=-500mA
IC=-500mA, IB=-50mA
60
60
-1 μA
200
-3 V
Base-emitter On Voltage
Collector Output Capacitance
CLASSIFICATION OF hFE
Range
VBE(on)
Cob
IC=-50mA, VCE=-4V
VCB=-100V, IE=-0
f=1MHz
B
-1
30
V
pF
C
Marking
60-120
100-200
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
X032
Rev.A
www.gmesemi.com
2
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PNP Epitaxial Silicon Transistor
Production specification
2SB861
X032
Rev.A
www.gmesemi.com
3
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