Silicon Transistor. 2SB861 Datasheet

2SB861 Transistor. Datasheet pdf. Equivalent


GME 2SB861
PNP Epitaxial Silicon Transistor
FEATURES
Low Frequency Power Amplifer Coloe
TV Vertical Deflection Output Complementary Pb
Pair With 2SD1138.
Lead-free
Production specification
2SB861
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-200
V
VCEO
VEBO
IC
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Continuous
Peak
Collector Dissipation
Ta=25
Tc=25
Junction and Storage Temperature
-150
V
-6 V
-2
A
-5
1.8
W
30
-45 to +150
X032
Rev.A
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2SB861 Datasheet
Recommendation 2SB861 Datasheet
Part 2SB861
Description PNP Epitaxial Silicon Transistor
Feature 2SB861; PNP Epitaxial Silicon Transistor FEATURES  Low Frequency Power Amplifer Coloe TV Vertical Deflec.
Manufacture GME
Datasheet
Download 2SB861 Datasheet




GME 2SB861
Production specification
PNP Epitaxial Silicon Transistor
2SB861
ELECTRICAL CHARACTERISTICS Ratings at 25ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions
MIN Typ MAX UNIT
Collector-base Breakdown Voltage
V(BR)CBO IC=-50mA,IE=0
-150
V
Emitter-base Breakdown Voltage
V(BR)EBO IE=-5mA,IC=0
-6
V
Collector Cut-off Current
ICBO
DC Current Gain
hFE
Collector-emitter Saturation Voltage VCE(sat)
VCB=-120V,IE=0
VCE=-4V,IC=-50mA
VCE=-10V,IC=-500mA
IC=-500mA, IB=-50mA
60
60
-1 μA
200
-3 V
Base-emitter On Voltage
Collector Output Capacitance
CLASSIFICATION OF hFE
Range
VBE(on)
Cob
IC=-50mA, VCE=-4V
VCB=-100V, IE=-0
f=1MHz
B
-1
30
V
pF
C
Marking
60-120
100-200
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
X032
Rev.A
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2



GME 2SB861
PNP Epitaxial Silicon Transistor
Production specification
2SB861
X032
Rev.A
www.gmesemi.com
3





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