Power Transistor(50V,3A )
FEATURES
Low VCE(sat) VCE(sat)=0.5V(Typ)（IC/IB=2A/0.2A）
Complements the 2SB1185.
Pb
Lead-...
Power
Transistor(50V,3A )
FEATURES
Low VCE(sat) VCE(sat)=0.5V(Typ)（IC/IB=2A/0.2A）
Complements the 2SB1185.
Pb
Lead-free
Production specification
2SD1762
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
60 V
VCEO VEBO IC PC Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Collector Dissipation
Ta=25℃ TC=25℃
Junction and Storage Temperature
50 V
5V
3 A
4.5
1 W
25
-55 to +150 ℃
X036 Rev.A
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1
Production specification
Power
Transistor(50V,3A )
2SD1762
ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions
MIN Typ MAX UNIT
Collector-base Breakdown Voltage BVCBO
IC=50µA,IB=0
60
V
Collector-emitter Breakdown Voltage BVCEO
IC=1mA,IB=0
50
V
Emitter-base Breakdown Voltage
BVEBO
IE=50µA,IC=0
5
V
Collector Cut-off Current
ICBO V...
