Power Transistors. 2SD2137A Datasheet

2SD2137A Transistors. Datasheet pdf. Equivalent


GME 2SD2137A
Production specification
Power Transistors
2SD2137A
FEATURES
High Forward Current Transfer Ratio hFE
Which Has Satisfactory Linearity.
Pb
Lead-free
Low Collector-emitter Saturation Voltage VCE(sat).
Allowing Supply With The Radial Taping.
APPLICATIONS
For Power Amplification.
Complementary to 2SB1417A.
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
80 V
VCEO
VEBO
IC
ICP
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Junction and Storage Temperature
80 V
6V
3A
Ta=25
5A
15
W
2
-55 to +150
X007
Rev.A
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1


2SD2137A Datasheet
Recommendation 2SD2137A Datasheet
Part 2SD2137A
Description Power Transistors
Feature 2SD2137A; Production specification Power Transistors 2SD2137A FEATURES  High Forward Current Transfer Rat.
Manufacture GME
Datasheet
Download 2SD2137A Datasheet




GME 2SD2137A
Production specification
Power Transistors
2SD2137A
ELECTRICAL CHARACTERISTICS Ratings at 25ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-Emitter Voltage
VCEO
IC=30mA,IB=0
80
V
Base-Emitter Voltage
VBE VCE=4V,IC=3A
1.8 V
Collector Cut-off Current
ICEO VCE=60V,IB=0
100 μA
Collector Cut-off Current
ICES VCE=80V, VBE=0
100 μA
Emitter Cut-off Current
IEBO VEB=6V,IC=0
100 μA
DC Current Gain
VCE=4V,IC=1A
70
hFE
VCE=4V,IC=3A
10
320
Collector-emitter Saturation Voltage VCE(sat)
Transition Frequency
fT
IC=3A, IB=375mA
VCE=5V, IC=0.2A
f=10MHz
1.2 V
30 MHz
Turn-on Time
Storage Time
Fall Time
ton 0.3 µs
IC=1A,IB1=0.1A,
tstg IB2=-0.1A,
VCC=50V
2.5 µs
tf 0.2 µs
CLASSIFICATION OF hFE
Rank
Q
Range
70-150
P
120-250
Q
160-320
X007
Rev.A
www.gmesemi.com
2



GME 2SD2137A
Power Transistors
Production specification
2SD2137A
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
X007
Rev.A
www.gmesemi.com
3





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