Document
Power Transistors
2SD2137, 2SD2137A
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Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1417 and 2SB1417A
4.2±0.2
10.0±0.2
Unit: mm
5.0±0.1 1.0±0.2
I Features • High forward current transfer ratio hFE which has satisfactory
linearity • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector to base 2SD2137
voltage
2SD2137A
VCBO
60 80
V
Collector to emitter voltage
2SD2137 2SD2137A
VCEO
60 80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC = 25°C
dissipation
Ta = 25°C
Junction temperature
Storage temperature
VEBO ICP IC PC
Tj Tstg
6 5 3 15 2 150 −55 to +150
V A A W
°C °C
18.0±0.5/
Sol.