N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP60L02H/J
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
▼ Low Gate Charge ▼ Simple Drive R...
Description
Advanced Power Electronics Corp.
AP60L02H/J
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
▼ Low Gate Charge ▼ Simple Drive Requirement
D
▼ Fast Switching
G
S
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02J) is available for low-profile applications.
BVDSS RDS(ON) ID
25V 12mΩ
50A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
G D S
Rating 25
± 20 50 32 180 62.5 0.5
-55 to 15...
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