Power MOSFET. SFU9120 Datasheet

SFU9120 MOSFET. Datasheet pdf. Equivalent


Fairchild Semiconductor SFU9120
Advanced Power MOSFET
SFR/U9120
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
n Lower RDS(ON) : 0.444 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
O2
O1
O1
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC) *
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
BVDSS = -100 V
RDS(on) = 0.6
ID = -4.9 A
D-PAK I-PAK
2
11
3
2
3
1. Gate 2. Drain 3. Source
Value
-100
-4.9
-3.4
-20
±30
144
-4.9
3.2
-6.5
2.5
32
0.26
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
Junction-to-Case
--
RθJA
Junction-to-Ambient *
--
RθJA Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.91
50
110
Units
oC/W
Rev. C


SFU9120 Datasheet
Recommendation SFU9120 Datasheet
Part SFU9120
Description Advanced Power MOSFET
Feature SFU9120; Advanced Power MOSFET SFR/U9120 FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technol.
Manufacture Fairchild Semiconductor
Datasheet
Download SFU9120 Datasheet




Fairchild Semiconductor SFU9120
SFR/U9120
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-100 --
-- -0.1
-2.0 --
-- --
-- --
-- --
-- --
-- --
-- 3.4
-- 425
-- 90
-- 31
-- 11
-- 21
-- 34
-- 18
-- 16
-- 3.1
-- 6.3
-- V
-- V/oC
-4.0 V
-100 nA
100
-10
-100 µA
0.6
-- S
550
135 pF
45
30
50
ns
80
45
20
-- nC
--
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-20V
VGS=20V
VDS=-100V
VDS=-80V,TC=125oC
VGS=-10V,ID=-2.5A
VDS=-40V,ID=-2.5A
O4
O4
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
VDD=-50V,ID=-6A,
RG=18
See Fig 13
O4 O5
VDS=-80V,VGS=-10V,
ID=-6A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -4.9
Integral reverse pn-diode
A
-- -20
in the MOSFET
O4 -- -- -3.8 V TJ=25oC,IS=-4.9A,VGS=0V
-- 105 -- ns TJ=25oC,IF=-6A
-- 0.4 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=9.0mH, IAS=-4.9A, VDD=-25V, RG=27*, Starting TJ =25oC
O3 ISD <_ -6A, di/dt <_ 350A/µs, VDD <_ BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250µs, Duty Cycle<_ 2%
O5 Essentially Independent of Operating Temperature



Fairchild Semiconductor SFU9120
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
Top : - 15V
101 - 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5V
- 5.0 V
Bottom : - 4.5V
100
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
-VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
2.5
2.0
1.5 VGS = -10 V
1.0
0.5
VGS = -20 V @ Note : TJ = 25 oC
0.0
0 4 8 12 16 20 24
-ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
800
600
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
400
C oss
200 C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
-VDS , Drain-Source Voltage [V]
SFR/U9120
Fig 2. Transfer Characteristics
101
100 150 oC
25 oC
10-1
2
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = -40 V
3. 250 µs Pulse Test
468
-VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.5
1.0 1.5 2.0 2.5 3.0 3.5
-VSD , Source-Drain Voltage [V]
4.0
Fig 6. Gate Charge vs. Gate-Source Voltage
10
VDS = -20 V
VDS = -50 V
VDS = -80 V
5
@ Notes : ID =-6.0 A
0
0 3 6 9 12 15 18
QG , Total Gate Charge [nC]







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