BDW94C

® BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDW94C. Also BDW94B is a PNP type. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ≤ 25 C Storage Temperature o Value BDW93C BDW94B 80 80 12 15 0.2 80 -65 to 150 150 BDW94C 100 100 Un it V V A A A W o o C C Max. Operating Junction Temperature For PNP types voltage and current values are negative. October 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj -case Thermal Resistance Junction-case 1.56 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BDW94B for BDW93C/94C T case = 150 o C for BDW94B for BDW93C/94C for BDW94B for BDW93C/94C V EB = 5 V I C = 100 mA for BDW94B for BDW 93C/94C IC = 5 A I C = 10 ...