BDW94CFP

BDW93CFP ® BDW94CFP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s MONOLITHIC DARLINGTON CONFIGURATION s COMPLEMENTARY PNP - NPN DEVICES s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s FULLY MOLDED INSULATED PACKAGE s 2000 V DC INSULATION (U.L. COMPLIANT) APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDW93CFP is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-220FP fully molded insulated package. It is intented for use in power linear and switching applications. The complementary PNP type is the BDW94CFP. 3 2 1 T0-220FP INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) IC Collector Current ICM Collector Peak Current IB Base Current Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature For PNP types voltage and current values are negative. September 2001 NPN PNP Value BDW93CFP BDW94CFP 100 100 12 15 0.2 33 -65 to 150 150 Unit V V A A A W oC oC 1/4 BDW93CFP / BDW94CFP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 3.8 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 100 V VCB = 100 V Tcase = 150 oC ICEO Collector Cut-off Current (IB = 0) IEBO ...