NPN TRANSISTOR. 2N2222AUB Datasheet

2N2222AUB TRANSISTOR. Datasheet pdf. Equivalent

2N2222AUB Datasheet
Recommendation 2N2222AUB Datasheet
Part 2N2222AUB
Description SURFACE MOUNT SILICON NPN TRANSISTOR
Feature 2N2222AUB; 2N2222AUB SURFACE MOUNT SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: Th.
Manufacture Central Semiconductor
Datasheet
Download 2N2222AUB Datasheet




Central Semiconductor 2N2222AUB
2N2222AUB
SURFACE MOUNT SILICON
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2222AUB is a
silicon NPN epitaxial planar transistor designed for
small signal, general purpose switching applications.
MARKING CODE: C2222A
UB CASE
APPLICATIONS:
• Oscillators
• Low noise amplifiers
• Mixers
FEATURES:
• Surface mount equivalent to 2N2222A
• Low noise
• Highly reliable hermetic package
• SOT-23 footprint compatible
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JA
75
50
6.0
800
0.5
-65 to +200
325
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=75V
ICBO
VCB=60V
ICES
VCE=50V
IEBO
VEB=6.0V
IEBO
VEB=4.0V
BVCBO
IC=1.0μA
75
BVCEO
IC=10mA
50
BVEBO
IE=10μA
6.0
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
0.6
VBE(SAT) IC=500mA, IB=50mA
hFE VCE=10V, IC=0.1mA
50
hFE VCE=10V, IC=1.0mA
75
hFE VCE=10V, IC=10mA
100
hFE VCE=10V, IC=150mA
100
hFE VCE=10V, IC=500mA
30
MAX
10
10
50
10
10
0.3
1.0
1.2
2.0
325
300
UNITS
V
V
V
mA
W
°C
°C/W
UNITS
nA
nA
nA
μA
nA
V
V
V
V
V
V
V
R1 (3-January 2017)



Central Semiconductor 2N2222AUB
2N2222AUB
SURFACE MOUNT SILICON
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN
fT VCE=20V, IC=20mA, f=100MHz
300
Cob VCB=10V, IE=0, f=100kHz
Cib VEB=0.5V, IC=0, f=100kHz
hfe VCE=10V, IC=1.0mA, f=1.0kHz
50
ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
toff VCC=30V, IC=150mA, IB1=IB2=15mA
MAX
8.0
25
35
300
UB CASE - MECHANICAL OUTLINE
UNITS
MHz
pF
pF
ns
ns
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Base
2) Emitter
3) Collector
4) Shield Connected to Lid
MARKING CODE: C2222A
CASE: Ceramic
TERMINALS: Gold plated over nickel underplate
R1 (3-January 2017)



Central Semiconductor 2N2222AUB
2N2222AUB
SURFACE MOUNT SILICON
NPN TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
w w w. c e n t r a l s e m i . c o m
R1 (3-January 2017)







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