BDX33/A/B/C
BDX33/A/B/C
Power Linear and Switching Applications
• High Gain General Purpose • Power Darlington TR • Com...
BDX33/A/B/C
BDX33/A/B/C
Power Linear and Switching Applications
High Gain General Purpose Power Darlington TR Complement to BDX34/34A/34B/34C respectively
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C VCEO Collector-Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 10 15 0.25 70 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units
IC ICP IB PC TJ TSTG
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDX33/A/B/C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Cut-off Current : BDX33 : BDX33A : BDX33B : BDX33C ICEO Collector Cut-off Current : BDX33 : BDX33A : BDX33B : BDX33C IEBO hFE Emitter Cut-off Current * DC Current Gain : BDX33/34 : BDX33B/33C VCE(sat) * Collector-Emitter Saturation Voltage : BDX33/33A : BDX33B/33C * Base-Emitter ON Voltage : BDX33/33A : BDX33B/33C * Parallel Diode Forward Voltage VCE = 3V, IC = 4A VCE = 3V, IC = 3A IC = 4A, IB = 8mA IC = ...