BDX33C

BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX34/34A/34B/34C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C VCEO Collector-Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 10 15 0.25 70 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP IB PC TJ TSTG ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDX33/A/B/C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Cut-off Current : BDX33 : BDX33A : BDX33B : BDX33C ICEO Collector Cut-off Current : BDX33 : BDX33A : BDX33B : BDX33C IEBO hFE Emitter Cut-off Current * DC Current Gain : BDX33/34 : BDX33B/33C VCE(sat) * Collector-Emitter Saturation Voltage : BDX33/33A : BDX33B/33C * Base-Emitter ON Voltage : BDX33/33A : BDX33B/33C * Parallel Diode Forward Voltage VCE = 3V, IC = 4A VCE = 3V, IC = 3A IC = 4A, IB = 8mA IC = ...