BDX34B

® BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature BDX33B BDX34B 80 80 10 15 0.25 70 -65 to 150 150 BDX33C BDX34C 100 100 V V A A A W o o Un it C C For PNP types voltage and current values are negative. October 1999 1/4 BDX33B BDX33C BDX34B BDX34C THERMAL DATA R thj -case Thermal Resistance Junction-case 1.78 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (I E = 0) Test Co nditions for BDX33B/34B for BDX33C/34C T cas e = 100 oC for BDX33B/34B f or BDX33C/34C for BDX33B/34B for BDX33C/34C o T cas e = 100 C for BDX33B/34B for BDX33C/34C V EB = 5 V I C =100 mA for BDX33B/34B for BDX33C/34C 80 100 80 100 80 100 2.5 2.5 750 4 V CE = 5 V f = 1MHz 100 V CB = 80 V VCB = 100V VCB = 80 V V CB = 100 V V CE = 40...