BDX34C

BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX33/33A/33B/33C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX34 : BDX34A : BDX34B : BDX34C VCEO Collector-Emitter Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 - 10 - 15 - 0.25 70 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP IB PC TJ TSTG ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDX34/A/B/C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BDX34 : BDX34A : BDX34B : BDX34C * Collector-Emitter Sustaining Voltage : BDX34 : BDX34A : BDX34B : BDX34C * Collector-Emitter Sustaining Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector Cut-off Current : BDX34 : BDX34A : BDX34B : BDX34C ICEO Collector Cut-off Current : BDX34 : BDX34A : BDX34B : BDX34C IEBO hFE Emitter Cut-off Current * DC Current Gain : BDX34/34A : BDX34B/34C VCE(sat) * Collector-Emitter Saturation Voltage : BDX34/34A : BDX34B/34C * Base-Emitter ON Voltage : BDX34/34A : BDX34B/34C * Parallel Diode Forward Voltage VCE = - 3V, IC = - 4A VCE = - 3V, IC...