BDX44

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BDX42; BDX43; BDX44 NPN Darlington transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02 Philips Semiconductors Product specification NPN Darlington transistors FEATURES High current (max. 1 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS Industrial switching applications such as: – print hammers – solenoids – relay and lamp drivers. handbook, halfpage BDX42; BDX43; BDX44 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION 2 3 DESCRIPTION NPN Darlington transistor in a TO-126; SOT32 plastic package. PNP complements: BDX45 and BDX47. 1 1 2 3 Top view MAM349 Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BDX42 BDX43 BDX44 VCES collector-emitter voltage BDX42 BDX43 BDX44 IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tmb ≤ 100 °C IC = 150 mA; VCE = 10 V IC = 500 mA; VCE = 10 V IC = 500 mA; VCE = 5 V; f = 100 MHz VBE = 0 − − − − − − 1000 2000 − − − − − − − − − 200 45 60 80 1 1.25 5 − − − MHz V V V A W W open emitter − − − − − − 60 80 90 V V V CONDITIONS MIN. TYP. MAX. UNIT 1997 Jul 02 2 Philips Semiconductors Product specification NPN Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IE...