BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
Plastic Medium-Power Complementary Silicon Transistors
These devices are de...
BDX53B, BDX53C (
NPN), BDX54B, BDX54C (
PNP)
Plastic Medium-Power Complementary Silicon
Transistors
These devices are designed for general−purpose amplifier and low−speed switching applications.
Features
High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
These Devices are Pb−Free and are RoHS Compliant*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
VCEO
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBDX53B, BDX54B
80
BDX53C, BDX54C
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollect...