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MJE2955

GME

Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors FEATURES  DC Current Gain Specified to 10A.  High Current Gain. Pb Lead-free Produc...


GME

MJE2955

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Description
Plastic-Encapsulate Transistors FEATURES  DC Current Gain Specified to 10A.  High Current Gain. Pb Lead-free Production specification MJE2955 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -70 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation @TC=25℃ Junction and Storage Temperature -60 V -5 V -10 A -6 A 75 W -55 to +150 ℃ X025 Rev.A www.gmesemi.com 1 Production specification Plastic-Encapsulate Transistors MJE2955 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN MAX UNIT Collector-emitter Sustaining Voltage Collector Cut-off Current VCEO(sus) ICEO Collector Cut-off Current ICEX Collector Cut-off Current Emitter Cut-off Current DC Current Gain ICBO IEBO hFE Collector-emitter Saturation Voltage VC...




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