Plastic-Encapsulate Transistors. MJE3055 Datasheet

MJE3055 Transistors. Datasheet pdf. Equivalent

Part MJE3055
Description Plastic-Encapsulate Transistors
Feature Plastic-Encapsulate Transistors FEATURES  DC Current Gain Specified to 10A.  High Current Gain. .
Manufacture GME
Datasheet
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MJE3055
Plastic-Encapsulate Transistors
FEATURES
DC Current Gain Specified to 10A.
High Current Gain.
Pb
Lead-free
Production specification
MJE3055
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
70 V
VCEO
VEBO
IC
IB
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation @TC=25
Junction and Storage Temperature
60 V
5V
10 A
6A
75 W
-55 to +150
X024
Rev.A
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MJE3055
Production specification
Plastic-Encapsulate Transistors
MJE3055
ELECTRICAL CHARACTERISTICS Ratings at 25ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-emitter Sustaining Voltage
Collector Cut-off Current
VCEO(sus)
ICEO
Collector Cut-off Current
ICEX
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
hFE
Collector-emitter Saturation Voltage VCE(sat)
Base-emitter on Voltage
Transition Frequency
VBE(on)
fT
IC=200mA,IB=0
VCE=30V,IB=0
VCE=70V,VEB(off)=1.5V
VCE=70V,VEB(off)=1.5V,TC=150
VCB=70V,IE=0
VCB=70V,IE=0, TC=150
VEB=5V,IC=0
VCE=4V,IC=4A
VCE=4V,IC=10A
IC=4A, IB=0.4A
IC=10A, IB=3.3A
VCE=4V ,IC=4A
VCE=10V, IC=0.5A,f=500kHz
60 V
700 µA
1.0
mA
5.0
1
mA
10
5 mA
20 100
5.0
1.1
V
8.0
1.8 V
2 MHz
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
X024
Rev.A
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2





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