TIP117

Production specification PNP Epitaxial Silicon Darlington Transistor TIP117 FEATURES  Monolithic Construction With Built in Base -Emitter Shunt Resistors. Pb Lead-free  Complementary to TIP112.  High DC Current Gain:hFE=1000@VCE=-4V,IC=-1A.  Low Collector-Emitter Saturation Voltage.  Industrial Use. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ Tc=25℃ -100 V -5 V -2 A -4 -50 mA 2 W 50 -65 to +150 ℃ X021 Rev.A www.gmesemi.com 1 Production specification PNP Epitaxial Silicon Darlington Transistor TIP117 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emi...