BDX53C

BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Audio amplifiers ■ Linear and switching industrial equipment Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code BDX53B BDX53C BDX54B BDX54C Marking BDX53B BDX53C BDX54B BDX54C R1 typ.= 10 kΩ R2 typ.= 150 Ω Package TO-220 Packaging Tube October 2007 Rev 4 1/7 www.st.com 7 Electrical ratings 1 Electrical ratings BDX53B - BDX53C - BDX54B - BDX54C Note: Table 2. Absolute maximum ratings Symbol Parameter NPN VCBO VCEO VEBO IC ICM IB PTOT Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (repetitive) Base current Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature PNP For PNP types voltage and current values are negative. Value BDX53B BDX53C BDX54B BDX54C 80 100 80 100 5 8 12 0.2 60 -65 to 150 150 Unit V V V A A mA W °C °C 2/7 BDX53B - BDX53C - BDX54B - BDX54C 2 Electrical characteristics Electrical characteristics Note: (TCASE=25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Uni...