EDF8164A1MA

8Gb, 16Gb: 253-Ball, Dual-Channel Mobile LPDDR3 SDRAM Features Mobile LPDDR3 SDRAM EDF8164A1MA, EDFA164A1MA Features Ultra-low-voltage core and I/O power supplies Frequency range – 800/933 MHz (data rate: 1600/1866 Mb/s/pin) 8n prefetch DDR architecture 8 internal banks for concurrent operation Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c) Programmable READ and WRITE latencies (RL/WL) Burst length: 8 Per-bank refresh for concurrent operation Auto temperature-compensated self refresh (ATCSR) by built-in temperature sensor Partial-array self refresh (PASR) Deep power-down mode (DPD) Selectable output drive strength (DS) Clock-stop capability On-die termination (ODT) Lead-free (RoHS-compliant) and halogen-free packaging Options VDD1/VDD2/VDDCA/VDDQ: 1.8V/1.2V/1.2V/1.2V Array configuration – 128...