BDX63A

BDX63 BDX63A BDX63B BDX63C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDX BDX BDX BDX 63 63A 63B 63C 60 80 100 120 80 5 ì ï ï VCEO VCBO VEBO IC ICM IB Ptot Tj Tstj Rth j-mb Semelab plc. Collector - emitter voltage (open base) Collector - base voltage (open emitter) Emitter - base voltage (open collector) Collector current Collector current (peak) Base current Total power dissipation at Tcase= 25°C Maximum junction temperature Storage junction temperature Thermal resistance, junction to mounting base. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk V V V A A mA W °C °C 100 5 ï ï 120 5 8 12 í ï ï 140 5 ï ï î 150 90 200 -65 to 200 1.94 °C / W Prelim. 7/93 BDX63 BDX63A BDX63B BDX63C ELECTRICAL CHARACTERISTICS (Tj = 25°C, Parameter ICBO ICEO IEBO hFE VBE VCEsat Cc fhfe E(BR) Collector cut-off current Collector cut-off current Emitter cut-off current D.C. current gain (note 1) Base - emitter voltage (note 1) Collector - emitter saturation voltage Collector capacitance Cut-off frequency Turn-off ...