P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BETTER POWER
BP3318
BP3318
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 50mȍ
-20A
Description
The ...
Description
BETTER POWER
BP3318
BP3318
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 50mȍ
-20A
Description
The BP3318 utilized advanced processin gtechni ques to achieve the lowest possible on-resistance, extremel y efficient and cost-effectiveness device. The TO-252 package is universally used for commercial-industrial applications.
Features
*Simple Drive Requirement *Lower Gate Charge *Fast Switching
Package Dimensions
TO-252
3318
REF.
A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00
2.30 REF. 0.70 0.90 0.60 0.90
REF.
G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55
0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation
VDS VGS ID @TC=25к ID @TC=100к IDM PD @TC=25к
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings -30 ...
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