60V Complementary MOSFET
General Description
The BPM0605CG uses advanced trench technology and design to provide excellent RDS(ON) with low gate...
Description
General Description
The BPM0605CG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Features
N channel VDS =60V, ID =6.3A
RDS(ON) <30mΩ @ VGS=10V P channel VDS =-60V, ID =-5A
RDS(ON) <80mΩ @ VGS=-10V High power and current handing capability Lead free product is acquired Surface mount package
Application
Typical Application
BPM0605CG
60V Complementary MOSFET
H-bridge Inverters
Ordering Information
Figure 1. Schematic Diagram
Part Number
Package
Operating Temperature
Packing Type
BPM0605CG
SOP-8
-40 ℃ to 105 ℃
Tape&Reel 4,000pcs/Reel
Marking
BPM0605 XXXXXY CGXWW
BPM0605CG_EN_DS_Rev.1.0
www.bpsemi.com BPS Confidential – Customer Use Only
1
BPM0605CG
60V Complementary MOSFET
Pin Configuration and Marking Information
S1 1 G1 2 S2 3 G2 4
BPM0605 XXXXXY CGXWW
8 D1 7 D1 6 D2 5 D2
XXXXXY: Lot Code CG:...
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