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BPM0605CG

BPS

60V Complementary MOSFET

General Description The BPM0605CG uses advanced trench technology and design to provide excellent RDS(ON) with low gate...


BPS

BPM0605CG

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Description
General Description The BPM0605CG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features N channel  VDS =60V, ID =6.3A RDS(ON) <30mΩ @ VGS=10V P channel  VDS =-60V, ID =-5A RDS(ON) <80mΩ @ VGS=-10V  High power and current handing capability  Lead free product is acquired  Surface mount package Application Typical Application BPM0605CG 60V Complementary MOSFET  H-bridge  Inverters Ordering Information Figure 1. Schematic Diagram Part Number Package Operating Temperature Packing Type BPM0605CG SOP-8 -40 ℃ to 105 ℃ Tape&Reel 4,000pcs/Reel Marking BPM0605 XXXXXY CGXWW BPM0605CG_EN_DS_Rev.1.0 www.bpsemi.com BPS Confidential – Customer Use Only 1 BPM0605CG 60V Complementary MOSFET Pin Configuration and Marking Information S1 1 G1 2 S2 3 G2 4 BPM0605 XXXXXY CGXWW 8 D1 7 D1 6 D2 5 D2 XXXXXY: Lot Code CG:...




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