TC58FVM6B2AXB65

TC58FVM6(T/B)2A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M × 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 words × 8 bits or as 4194304 words × 16 bits. The TC58FVM6T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVM6T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. FEATURES Power supply voltage Block erase architecture VDD = 2.3 V~3.6 V 8 × 8 Kbytes/127 × 64 Kbytes Operating temperature Boot block architecture Ta = −40°C~85°C TC58FVM6T2A: top boot block Organization TC58FVM6B2A: bottom boot block 8M × 8 bits/4M × 16 bits ...