JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA1037 TRANSISTOR (PNP)
FEAT...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate
Transistors
2SA1037
TRANSISTOR (
PNP)
FEATURES
Power dissipation
PCM : 0.2 W (Tamb=25℃) Collector current
ICM : -0.15 A Collector-base voltage
V(BR)CBO : -60 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
2. 9
1. 9
0. 95
0. 95
1. 0
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
2. 4 1. 3
Unit: mm
0. 4
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO
hFE VCE(sat)
fT
Test conditions
Ic=-50µA, IE=0
Ic= -1mA, IB=0
IE= -50µA, IC=0
VCB=- 60 V , IE=0 VEB= -6V , IC=0 VCE=-6V, IC= -1mA IC=-50 mA, IB= -5mA VCE=-12V, IC= -2mA
f =30MHz
MIN -60 -50 -6
120
120
TYP
MAX UNIT V V V
-0.1 µA -0....
