2SA1179

Production specification Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE which has satisfactory linearity.  High speed switching.  Complementary to 2SD1749. Pb Lead-free 2SA1179 APPLICATIONS  For power application and switching. ORDERING INFORMATION Type No. Marking 2SA1179 M SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -55 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -50 -5 IC Collector Current -Continuous -150 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C093 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxial Planar Transistor 2SA1179 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -55 V Collector-emit...