2SC1623

Production specification Silicon Epitaxial Planar Transistor FEATURES  High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA).  High Voltage:VCEO=50V.  MSL 1. APPLICATIONS Pb Lead-free  NPN Silicon Epitaxial Planar Transistor.  Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. Marking 2SC1623 L4/L5/L6/L7 2SC1623 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 60 50 5 100 200 -55 to +150 Units V V V mA mW ℃ C018 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxial Planar Transistor 2SC1623 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collec...