2SC2411

Production specification Silicon Epitaxial Planar Transistor FEATURES  Power dissipation: PCM=200Mw.  High ICM(MAX.),I CM(MAX.)=0.5mA.  Low VCE(sat)。  Complements the 2SA1036. Pb Lead-free 2SC2411 APPLICATIONS  NPN Silicon Epitaxial Planar Transistor. ORDERING INFORMATION Type No. Marking 2SC2411 CP/CQ/CR SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 32 5 500 200 -55 to+150 Units V V V mA mW ℃ C097 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxial Planar Transistor 2SC2411 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol Test conditions V(BR)CBO IC=100μA,IE=0 V(BR)CEO IC=1mA,IB=0 ...