2SC2412

Silicon Epitaxial Planar Transistor FEATURES  Low Cob.Cob=2.0pF  Complementary to 2SA1037 Pb Lead-free Production specification 2SC2412 APPLICATIONS  NPN Silicon Epitaxial Planar Transistor ORDERING INFORMATION Type No. Marking 2SC2412 BQ/BR/BS SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 60 50 7 150 200 -55 to +150 Units V V V mA mW ℃ C020 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxial Planar Transistor 2SC2412 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EB...