Document
Silicon Epitaxial Planar Transistor
FEATURES
Power dissipation:PC=150mW. Excellent hFE linearity:hFE(2)=25
(VCE=6V,IC=400mA). Complementary to 2SA1182.
Pb
Lead-free
APPLICATIONS
Audio frequency general purpose amplifier applications.
Production specification
2SC2859
SOT-23
ORDERING INFORMATION
Type No. 2SC2859
Marking WO/WY/WG
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VCBO VCEO VEBO IC PC Tj,Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature
35 V
30 V
5V
500 mA
150 mW
-55 to +125
℃
C100 Rev.A
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Production specification
Silicon Epitaxial Planar Transistor
2SC2859
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
35
V
Collector-emit.