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2SC2859 Dataheets PDF



Part Number 2SC2859
Manufacturers GME
Logo GME
Description Silicon Transistor
Datasheet 2SC2859 Datasheet2SC2859 Datasheet (PDF)

Silicon Epitaxial Planar Transistor FEATURES  Power dissipation:PC=150mW.  Excellent hFE linearity:hFE(2)=25 (VCE=6V,IC=400mA).  Complementary to 2SA1182. Pb Lead-free APPLICATIONS  Audio frequency general purpose amplifier applications. Production specification 2SC2859 SOT-23 ORDERING INFORMATION Type No. 2SC2859 Marking WO/WY/WG Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Volt.

  2SC2859   2SC2859


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Silicon Epitaxial Planar Transistor FEATURES  Power dissipation:PC=150mW.  Excellent hFE linearity:hFE(2)=25 (VCE=6V,IC=400mA).  Complementary to 2SA1182. Pb Lead-free APPLICATIONS  Audio frequency general purpose amplifier applications. Production specification 2SC2859 SOT-23 ORDERING INFORMATION Type No. 2SC2859 Marking WO/WY/WG Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 35 V 30 V 5V 500 mA 150 mW -55 to +125 ℃ C100 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxial Planar Transistor 2SC2859 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 35 V Collector-emit.


2SC2714 2SC2859 2SC2859-O


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